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参数资料
| 型号： | 2N6427D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 6/10页 |
| 文件大小： | 706K |
| 代理商： | 2N6427D26Z |
ITEM DESCRIPTION
Base of Package to Lead Bend
Component Height
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Component Pitch
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0.098 (max)
0.928 (+/- 0.025)
0.630 (+/- 0.020)
0.748 (+/- 0.020)
0.040 (max)
0.031 (max)
0.500 (+/- 0.020)
0.500 (+/- 0.008)
0.150 (+0.009, -0.010)
0.247 (+/- 0.007)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
0.209 (+0.051, -0.052)
0.032 (+/- 0.006)
0.021 (+/- 0.006)
0.708 (+0.020, -0.019)
0.236 (+/- 0.012)
0.035 (max)
0.360 (+/- 0.025)
0.157 (+0.008, -0.007)
0.004 (max)
Note : All dimensions are in inches.
ITEM DESCRIPTION
SYSMBOL
MINIMUM
MAXIMUM
Reel Diameter
D1
13.975
14.025
Arbor Hole Diameter (Standard)
D2
1.160
1.200
(Small Hole)
D2
0.650
0.700
Core Diameter
D3
3.100
3.300
Hub Recess Inner Diameter
D4
2.700
3.100
Hub Recess Depth
W1
0.370
0.570
Flange to Flange Inner Width
W2
1.630
1.690
Hub to Hub Center Width
W3
2.090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P
Pd
b
d
L1
L
S
WO
W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User Direction of Feed
SENSI TIVE DEVICES
ELECT ROSTATIC
D1
D3
Customized Label
W2
W1
W3
F63TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6427G | 功能描述:达林顿晶体管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6427RLRA | 功能描述:达林顿晶体管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6427RLRAG | 功能描述:达林顿晶体管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6428 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
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