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参数资料
| 型号： | 2N7000 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 文件页数： | 2/2页 |
| 文件大小： | 46K |
| 代理商： | 2N7000 |
DS11304 Rev. D-3
2 of 2
2N7000
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristics
Symbol
Min
Typ
Max
Unit
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
60
—
V
VGS = 0V, ID = 10A
Drain Cutoff Current
IDSS
—
1.0
A
VDS = 48V, VGS = 0V
Gate-Body Leakage Current
IGSS
—
±10
nA
VGS = ±15V, VDS = 0V
On Characteristics (Note 1)
Gate-Source Threshold Voltage
VGS(th)
0.8
—
3.0
V
VDS =VGS, ID = 1.0mA
Drain-Source On-Resistance
rDS(ON)
—
5.0
W
VGS = 10V, ID = 0.5A
Dynamic Characteristics
Input Capacitance
CISS
—60—
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
COSS
—25—
pF
Feedback Capacitance
CRSS
—
5.0
—
pF
Switching Characteristics
Turn-On Time
ton
—10—
ns
VDS = 15V, ID = 0.5A,
VGS = 10V, RGEN = 25
W,
RL = 25
W
Turn-Off Time
toff
—10—
ns
Thermal Characteristics
Thermal Resistance, Junction to Ambient
RθJA
—
312.5
K/W
—
Notes:
1. Pulse width
≤ 300s, duty cycle ≤ 2%.
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| 2N7002-01 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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