参数资料
型号: 2N7002A-7
厂商: Diodes Inc
文件页数: 2/6页
文件大小: 0K
描述: MOSFET N CH 60V 180MA SOT23
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 180mA
开态Rds(最大)@ Id, Vgs @ 25° C: 6 欧姆 @ 115mA,5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
输入电容 (Ciss) @ Vds: 23pF @ 25V
功率 - 最大: 370mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 标准包装
其它名称: 2N7002A-7DIDKR
2N7002A
Marking Information
MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Date Code Key
MN1
Chengdu A/T Site
MN1
Shanghai A/T Site
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Steady
State
Steady
State
T A = +25°C
T A = +85°C
T A = +100°C
T A = +25°C
T A = +85°C
T A = +100°C
I D
I D
180
130
115
220
160
140
mA
mA
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I S
I DM
0.5
800
A
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
P D
R θ JA
R θ JC
T J, T STG
370
540
348
241
91
-55 to +150
mW
°C/W
°C
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
2N7002A
Document number: DS31360 Rev. 12 - 2
2 of 6
www.diodes.com
July 2013
? Diodes Incorporated
相关PDF资料
PDF描述
2N7002DW-7 MOSFET N-CHANEL DUAL 60V SOT-363
2N7002DW MOSFET N CH DL 60V 115MA SC70-6
2N7002E-7-F MOSFET N-CH 60V 240MA SOT23-3
2N7002ET3G MOSFET N-CH 60V 260MA SOT-23
2N7002K-7 MOSFET N-CH 60V 300MA SOT23-3
相关代理商/技术参数
参数描述
2N7002-AE3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002AK,215 制造商:NXP Semiconductors 功能描述:2N7002AK/SOT23/REELLP// 制造商:NXP Semiconductors 功能描述:2N7002AK/SOT23/REELLP// - Tape and Reel
2N7002AQ-13 功能描述:MOSFET NCH 60V 180MA SOT23 制造商:diodes incorporated 系列:汽车级,AEC-Q101 包装:带卷(TR) 零件状态:在售 FET 类型:N 沟道 技术:MOSFET (Metal Oxide) 漏源极电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):180mA(Ta) 不同?Id,Vgs 时的?Rds On(最大值):5 欧姆 @ 115mA,10V 不同 Id 时的 Vgs(th)(最大值):2V @ 250μA 不同 Vgs 时的栅极电荷(Qg):- 不同 Vds 时的输入电容(Ciss):23pF @ 25V FET 功能:- 功率耗散(最大值):* 工作温度:-55°C ~ 150°C(TJ) 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商器件封装:SOT-23 标准包装:10,000
2N7002AQ-7 功能描述:MOSFET NCH 60V 180MA SOT23 制造商:diodes incorporated 系列:汽车级,AEC-Q101 包装:带卷(TR) 零件状态:在售 FET 类型:N 沟道 技术:MOSFET (Metal Oxide) 漏源极电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):180mA(Ta) 不同?Id,Vgs 时的?Rds On(最大值):5 欧姆 @ 115mA,10V 不同 Id 时的 Vgs(th)(最大值):2V @ 250μA 不同 Vgs 时的栅极电荷(Qg):- 不同 Vds 时的输入电容(Ciss):23pF @ 25V FET 功能:- 功率耗散(最大值):* 工作温度:-55°C ~ 150°C(TJ) 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商器件封装:SOT-23 标准包装:3,000
2N7002BK 制造商:NXP Semiconductors 功能描述:MOSFETN CH60V0.35ASOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.35A,SOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.35A,SOT23, Transistor Polarity:N Channel, Continuous Drain Cur