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参数资料
| 型号： | 2N7002ET3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 260MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 260mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 欧姆 @ 240mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.81nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 26.7pF @ 25V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
2N7002E
Small Signal MOSFET
60 V, 310 mA, Single, N ? Channel, SOT ? 23
Features
?
?
?
?
Low R DS(on)
Small Footprint Surface Mount Package
Trench Technology
These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
3.0 W @ 4.5 V
I D MAX
(Note 1)
310 mA
Applications
2.5 W @ 10 V
?
?
?
?
Low Side Load Switch
Level Shift Circuits
DC ? DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Simplified Schematic
N ? Channel
3
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
60
± 20
V
V
1
Drain Current (Note 1)
Steady State
T A = 25 ° C
T A = 85 ° C
I D
260
190
mA
2
(Top View)
t<5s
Power Dissipation (Note 1)
Steady State
t<5s
T A = 25 ° C
T A = 85 ° C
P D
310
220
300
420
mW
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
Pulsed Drain Current (t p = 10 m s)
Operating Junction and Storage
Temperature Range
Source Current (Body Diode)
I DM
T J , T STG
I S
1.2
? 55 to
+150
300
A
° C
mA
1
2
SOT ? 23
CASE 318
STYLE 21
1
Gate
703 M G
G
2
Source
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
703 = Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Junction ? to ? Ambient ? Steady State
(Note 1)
Symbol
R q JA
Max
417
Unit
° C/W
ORDERING INFORMATION
Device Package Shipping ?
2N7002ET1G SOT ? 23 3000/Tape & Reel
Junction ? to ? Ambient ? t ≤ 5 s (Note 1) R q JA 300
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
February, 2011 ? Rev. 3
1
Publication Order Number:
2N7002E/D
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7002K-7 | MOSFET N-CH 60V 300MA SOT23-3 |
| 2N7002KT3G | MOSFET N-CH 60V 320MA SOT-23 |
| 2N7002KW | MOSFET N-CH 60V 310MA SOT323 |
| 2N7002K | MOSFET N-CH 60V 115MA SOT23 |
| 2N7002LT1 | MOSFET N-CH 60V 115MA SOT-23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002F | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes |
| 2N7002F,215 | 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23 |
| 2N7002FN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002FTR | 制造商:NXP Semiconductors 功能描述: |
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