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| 型号： | 2N7002KT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 320MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 13/Apr/2009 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 320mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 24.5pF @ 20V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
2N7002K, 2V7002K
Small Signal MOSFET
60 V, 380 mA, Single, N ? Channel, SOT ? 23
Features
? ESD Protected
? Low R DS(on)
? Surface Mount Package
? 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC ? Q101 Qualified and
PPAP Capable
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
I D MAX
380 mA
Applications
? Low Side Load Switch
? Level Shift Circuits
? DC ? DC Converter
? Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
SIMPLIFIED SCHEMATIC
Gate 1
3 Drain
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
60
± 20
Unit
V
V
Source
2
(Top View)
Drain Current (Note 1)
Steady State 1 sq in Pad
T A = 25 ° C
T A = 85 ° C
I D
380
270
mA
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
Drain Current (Note 2)
Steady State Minimum Pad
Power Dissipation
Steady State 1 sq in Pad
Steady State Minimum Pad
T A = 25 ° C
T A = 85 ° C
I D
P D
320
230
420
300
mA
mW
1
2
SOT ? 23
CASE 318
STYLE 21
1
3
704 M G
G
2
Pulsed Drain Current (t p = 10 m s)
Operating Junction and Storage
Temperature Range
I DM
T J , T STG
1.5
? 55 to
+150
A
° C
Gate
704 = Specific Device Code*
M = Date Code*
G = Pb ? Free Package
Source
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
Gate ? Source ESD Rating
(HBM, Method 3015)
I S
T L
ESD
300
260
2000
mA
° C
V
(Note: Microdot may be in either location)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
2. Surface ? mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
ORDERING INFORMATION
Device Package Shipping ?
2N7002KT1G SOT ? 23 3000 / Tape & Reel
(Pb ? Free)
2V7002KT1G
SOT ? 23
3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
February, 2013 ? Rev. 11
1
Publication Order Number:
2N7002K/D
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7002KW | MOSFET N-CH 60V 310MA SOT323 |
| 2N7002K | MOSFET N-CH 60V 115MA SOT23 |
| 2N7002LT1 | MOSFET N-CH 60V 115MA SOT-23 |
| 2N7002T-7 | MOSFET N-CH 60V 115MA SOT-523 |
| 2N7002TC | MOSFET N-CHAN 60V SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002KTB | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KTB6 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002K-TP | 功能描述:MOSFET 350mW, 60V, 340mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002KU | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:N Channel MOSFET |
| 2N7002KW | 功能描述:MOSFET NCHAN Enhance MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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