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参数资料
| 型号： | 2N7002DW |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/3页 |
| 文件大小： | 42K |
| 代理商： | 2N7002DW |
DS30120 Rev. 2P-1
1 of 3
2N7002DW
NEW
PRODUCT
2N7002DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
2N7002DW
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS
≤ 1.0M
VDGR
60
V
Gate-Source Voltage (Note 1)
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
ID
115
73
800
mA
Total Power Dissipation
Derating above TA = 25°C (Note 1)
Pd
200
1.60
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
625
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
≤ 300s, duty cycle ≤ 2%.
A
M
J
L
F
D
B C
H
K
KXX
G
1
S
1
S
2
G
2
D
1
D
2
Mechanical Data
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K72
Weight: 0.006 grams (approx.)
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
POWER SEMICONDUCTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002DW H6327 | 功能描述:MOSFET 2N-CH 60V 0.3A SOT363 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:OptiMOS™ 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| 2N7002DW L6327 | 功能描述:MOSFET N-KANAL SML SIG MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002DW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002DW_05 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS |
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