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参数资料
| 型号： | 2N7002DW |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/3页 |
| 文件大小： | 42K |
| 代理商： | 2N7002DW |
DS30120 Rev. 2P-1
2 of 3
2N7002DW
NEW
PRODUCT
Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 10
A
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
1.0
500
A
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
1.0
2.0
V
VDS =VGS, ID =-250
A
Static Drain-Source On-Resistance
@ Tj = 25°C
@Tj = 125°C
RDS (ON)
3.2
4.4
7.5
13.5
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5
1.0
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150
,VGEN = 10V,
RGEN = 25
Turn-Off Delay Time
tD(OFF)
11
20
ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
≤ 300s, duty cycle ≤ 2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002DW H6327 | 功能描述:MOSFET 2N-CH 60V 0.3A SOT363 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:OptiMOS™ 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| 2N7002DW L6327 | 功能描述:MOSFET N-KANAL SML SIG MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002DW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002DW_05 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS |
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