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参数资料
| 型号： | 2N7002L-T1 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | TO-236, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 58K |
| 代理商： | 2N7002L-T1 |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Total Quad
Parameter
Symbol
2N7000
2N7002
VQ1000J
VQ1000P
VQ1000J/P
BS170
Unit
Drain-Source Voltage
VDS
60
Gate-Source Voltage—Non-Repetitive
VGSM
"40
"30
"25
V
Gate-Source Voltage—Continuous
VGS
"20
Continuous Drain Current
TA= 25_C
0.2
0.115
0.225
0.5
Continuous Drain Current
(TJ = 150_C)
TA= 100_C
ID
0.13
0.073
0.14
0.175
A
Pulsed Drain Currenta
IDM
0.5
0.8
1
TA= 25_C
0.4
0.2
1.3
2
0.83
Power Dissipation
TA= 100_C
PD
0.16
0.08
0.52
0.8
W
Thermal Resistance, Junction-to-Ambient
RthJA
312.5
625
96
62.5
156
_C/W
Operating Junction and
Storage Temperature Range
TJ, Tstg
–55 to 150
_C
Notes
a.
Pulse width limited by maximum junction temperature.
b.
tp v 50 ms.
SPECIFICATIONS2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 mA
70
60
VDS = VGS, ID = 1 mA
2.1
0.8
3
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 0.25 mA
2.0
1
2.5
VDS = 0 V, VGS = "15 V
"10
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 48 V, VGS = 0 V
1
TC = 125_C
1000
m
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
mA
TC = 125_C
500
VDS = 10 V, VGS = 4.5 V
0.35
0.075
On-State Drain Currentb
ID(on)
VDS = 7.5 V, VGS = 10 V
1
0.5
A
VGS = 4.5 V, ID = 0.075 A
4.5
5.3
VGS = 5 V, ID = 0.05 A
3.2
7.5
Drain-Source On-Resistanceb
rDS(on)
TC = 125_C
5.8
13.5
W
DS(on)
VGS = 10 V, ID = 0.5 A
2.4
5
7.5
TJ = 125_C
4.4
9
13.5
Forward Transconductanceb
gfs
VDS = 10 V, ID = 0.2 A
100
80
Common Source Output Conductanceb
gos
VDS = 5 V, ID = 0.05 A
0.5
mS
Dynamic
Input Capacitance
Ciss
22
60
50
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V
f = 1 MHz
11
25
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
2
5
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