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参数资料
| 型号： | 2N7002L-T1 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | TO-236, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 58K |
| 代理商： | 2N7002L-T1 |
Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002LT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal MOSFET 115 mA， 60 Volts |
| 2N7002LT1G | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002LT1G | 制造商:ON Semiconductor 功能描述:MOSFET Transistor Transistor Polarity:Si |
| 2N7002LT1H | 制造商:ON Semiconductor 功能描述:SMALL SIGNAL MOSFET 60 V |
| 2N7002LT3 | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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