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参数资料
| 型号： | 2N7002L-T1 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | TO-236, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 58K |
| 代理商： | 2N7002L-T1 |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0
1
2
3
4
5
6
0
2
4
6
8
101214
1618
20
0.001
0.010
0.100
1.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
500 mA
ID = 50 mA
TJ = 25
_C
TJ = 125
_C
Threshold Voltage
–0.75
–0.50
–0.25
–0.00
0.25
0.50
–50
–25
0
25
50
75
100
125
150
ID = 250
mA
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
Normalized
Ef
fective
T
ransient
Thermal
Impedance
t1 – Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
Notes:
PDM
t2
I S
–
Source
Current
(A)
r DS
(on)
–
On-Resistance
(
)
V
GS
(t
h
)
–
V
ariance
(V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002LT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal MOSFET 115 mA， 60 Volts |
| 2N7002LT1G | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002LT1G | 制造商:ON Semiconductor 功能描述:MOSFET Transistor Transistor Polarity:Si |
| 2N7002LT1H | 制造商:ON Semiconductor 功能描述:SMALL SIGNAL MOSFET 60 V |
| 2N7002LT3 | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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