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参数资料
| 型号： | 2N7002T/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/13页 |
| 文件大小： | 153K |
| 代理商： | 2N7002T/R |
1.
Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Suitable for logic level gate drive
sources
Very fast switching
Surface-mounted package
Trench MOSFET technology
1.3 Applications
Logic level translators
High-speed line drivers
1.4 Quick reference data
2.
Pinning information
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
SO
T23
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C
≤ Tj ≤ 150 °C
--60
V
ID
drain current
-
300
mA
Ptot
total power dissipation
--0.83
W
Static characteristics
RDSon
drain-source on-state
resistance
VGS =10V; ID =500 mA; Tj =25°C;
-2.8
5
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
G
gate
SOT23 (TO-236AB)
2S
source
3
D
drain
12
3
S
D
G
mbb076
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002T-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R |
| 2N7002V | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002V-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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