参数资料
型号: 2N7002T/R
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封装: PLASTIC PACKAGE-3
文件页数: 5/13页
文件大小: 153K
代理商: 2N7002T/R
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 September 2011
Document identifier: 2N7002
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
相关PDF资料
PDF描述
2N7002/T3 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002-T 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002TRL13 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7221 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7236R1 18 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
相关代理商/技术参数
参数描述
2N7002T-TP 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
2N7002V 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002V_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002V_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
2N7002V-7 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube