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参数资料
| 型号： | 2N7002T/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 8/13页 |
| 文件大小： | 153K |
| 代理商： | 2N7002T/R |
2N7002
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
4 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
6.
Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
Mounted on a printed-circuit board;
minimum footprint ; vertical in still air
-
350
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
150
K/W
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration
003aab351
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
tp (s)
Zth(j-sp)
(K/W)
single pulse
0.2
0.1
0.05
δ =0.5
0.02
tp
T
P
t
tp
T
δ =
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002T-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R |
| 2N7002V | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002V-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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