参数资料
型号: 2SA1620-Y
元件分类: 小信号晶体管
英文描述: 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封装: 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN
文件页数: 1/6页
文件大小: 292K
代理商: 2SA1620-Y
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MOS FIELD EFFECT TRANSISTOR
2SK4081
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18785EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 5
Ω MAX. (VGS = 10 V, ID = 1.0 A)
Low gate charge
QG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4081-S15-AY
Note
Tube 70 p/tube
TO-251 (MP-3-a) typ. 0.39 g
2SK4081(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK4081-ZK-E1-AY
Note
2SK4081-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±2.0
A
Drain Current (pulse)
Note1
ID(pulse)
±8.0
A
Total Power Dissipation (TC = 25
°C)
PT1
30
W
Total Power Dissipation (TA = 25
°C)
Note2
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note3
IAS
1.4
A
Single Avalanche Energy
Note3
EAS
117
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3. Starting Tch = 25
°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-251)
(TO-252)
2007
<R>
相关PDF资料
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2SA1630-11S 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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