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参数资料
| 型号： | 2SA1620-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 292K |
| 代理商： | 2SA1620-Y |
Data Sheet D18785EJ2V0DS
3
2SK4081
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Percentage
of
Rated
P
ower
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Tch - Channel Temperature -
°C
P
T-
Total
P
ower
Dissi
pa
tion
-
W
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
I
D
-
Drain
Cur
rent
-
A
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
ID(pulse)
ID(DC)
TC = 25
°C
Single Pulse
RD
S(
on
) L
im
ite
d
(V
GS
= 1
i 0
V)
PW
= 1
i
00
μs
1
i m
i
s
1
i
0
m
i
s
Po
w
er
D
iss
ip
ati
on
Li
m
ite
d
VDS - Drain to Source Voltage - V
I
D
-
Drain
Cur
rent
-
A
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
TC - Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t
)-
T
ransi
ent
Thermal
Resi
stance
-
°C/
W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125
°C/Wi
Rth(ch-C) = 4.167
°C/Wi
Single Pulse
PW - Pulse Width - s
100
μ
1 m
10 m
100 m
1
10
100
1000
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1630-11S | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1630-T11Q | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1630-11R | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1630-T11S | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1630-T11T | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1621 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-59-30V .8A .2W SURFACE MOUNT |
| 2SA1621-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1624 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-9 -250V -.1A .5WECB |
| 2SA1624E-AA | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SA1625 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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