参数资料
型号: 2SA1620-Y
元件分类: 小信号晶体管
英文描述: 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封装: 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN
文件页数: 2/6页
文件大小: 292K
代理商: 2SA1620-Y
Data Sheet D18785EJ2V0DS
2
2SK4081
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.0
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 1.0 A
0.35
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 1.0 A
4.2
5
Ω
Input Capacitance
Ciss
VDS = 10 V,
230
pF
Output Capacitance
Coss
VGS = 0 V,
95
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
11
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 1.0 A,
11
ns
Rise Time
tr
VGS = 10 V,
7
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
13
ns
Fall Time
tf
13.5
ns
Total Gate Charge
QG
7.2
nC
Gate to Source Charge
QGS
2.9
nC
Gate to Drain Charge
QGD
VDD = 450 V,
VGS = 10 V,
ID = 2.0 A
3.0
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 2.0 A, VGS = 0 V
0.87
1.5
V
Reverse Recovery Time
trr
IF = 2.0 A, VGS = 0 V,
175
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
550
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
τ
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
相关PDF资料
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2SA1630-11S 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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