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参数资料
| 型号： | 2SA1620-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 292K |
| 代理商： | 2SA1620-Y |
Data Sheet D18785EJ2V0DS
5
2SK4081
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
R
DS
(o
n)
-Drai
nto
Sourc
eOn-sta
te
Re
sist
ance
-
Ω
0
2
4
6
8
10
12
-75
-25
25
75
125
175
ID = 2.0 A
1.0 A
VGS = 10 V
Pulsed
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s-
Capacitance
-
pF
0.1
1
10
100
1000
10000
0.1
1
10
100
1000
Crss
Ciss
Coss
VGS = 0 V
f = 1 MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(on)
,t
r,
t
d(of
f),
t
f-
S
w
itching
Time
-
ns
1
10
100
1000
0.1
1
10
VDD = 150 V
VGS = 10 V
RG = 10
Ω
tf
tr
td(on)
td(off)
ID - Drain Current - A
V
DS
-
Drain
to
S
ource
Voltage
-
V
0
100
200
300
400
500
600
012
3
456
78
0
2
4
6
8
10
12
VDS
VGS
ID = 2.0 A
VDD = 450 V
300 V
150 V
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Diode
Forward
Current
-
A
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
0 V
VGS = 10 V
VF(S-D) - Source to Drain Voltage - V
trr
-R
everse
Reco
very
Tim
e-
ns
10
100
1000
0.1
1
10
di/dt = 100 A/
μs
VGS = 0 V
IF - Diode Forward Current - A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1621 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-59-30V .8A .2W SURFACE MOUNT |
| 2SA1621-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1624 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-9 -250V -.1A .5WECB |
| 2SA1624E-AA | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SA1625 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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