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| 型号： | 2SA1973 |
| 厂商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor for DC/DC Converter Applications(用于DC/DC变换器的PNP硅外延平面型晶体管) |
| 中文描述： | 进步党硅外延平面晶体管直流/直流转换器应用程序（用于直流/直流变换器的新进步党硅外延平面型晶体管） |
| 文件页数： | 1/4页 |
| 文件大小： | 44K |
| 代理商： | 2SA1973 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN5613
2SA1973/2SC5310
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-1556 No.5613–1/4
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1
Package Dimensions
unit:mm
2018B
[2SA1973/2SC5310]
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end
products.
Specifications
( ) : 2SA1973
Absolute Maximum Ratings at Ta = 25C
Mounted on a glass-epoxy board (20
×30×1.6mm)
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* : The 2SA1973/2SC5310 are classified by 100mA hFE as follows :
Continued on next page.
Marking : 2SA1973 : NS
2SC5310 : NN
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1977-A | 功能描述:TRANS RF PNP 12V 0.05A SOT-23 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:8.5GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 1GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:- 标准包装:1 |
| 2SA1977-L-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:GP BJT |
| 2SA1977-T1B-A | 功能描述:RF TRANSISTOR PNP SOT-23 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:8.5GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 1GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:3,000 |
| 2SA1977-T1B-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1978-A | 功能描述:RF TRANSISTOR PNP SOT-23 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:5.5GHz 噪声系数（dB，不同 f 时的典型值）:2dB @ 1GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 15mA，10V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:- 标准包装:1 |
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