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参数资料
| 型号： | 2SA1973 |
| 厂商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor for DC/DC Converter Applications(用于DC/DC变换器的PNP硅外延平面型晶体管) |
| 中文描述： | 进步党硅外延平面晶体管直流/直流转换器应用程序（用于直流/直流变换器的新进步党硅外延平面型晶体管） |
| 文件页数： | 4/4页 |
| 文件大小： | 44K |
| 代理商： | 2SA1973 |
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
2SA1973/2SC5310
PS No.5613–4/4
2SA1785 / 2SC4645
0
280
240
250
200
160
120
80
40
20
060
40
80
100
140
120
160
PC -- Ta
ITR08249
PT=100
s
0.1
5
2
5
3
1.0
7
5
2
3
7
5
2
3
7
0.01
10
7
1.0
25
37
25
32
5
3
DC
operation
10ms
ICP
1ms
IC
ITR08248
Ta=25
°C
Single pulse
Mounted on a glass-epoxy board
(20
×30×1.6mm)
For PNP, the minus sign (–) is omitted.
2SA1973 / 2SC5310
A S O
VBE(sat) -- IC
--1.0
3
2
7
5
2SA1973
IC / IB=20
Pulse
ITR08246
25
°C
VBE(sat) -- IC
ITR08247
25
°C
--0.01
23
5
7
--0.1
23
2
3
57 --1.0
--25
°C
Ta=75°C
1.0
3
2
7
5
2SC5310
IC / IB=20
Pulse
0.01
23
5
7
0.1
23
2
3
57 1.0
--25
°C
Ta=75°C
Collector Current, IC –A
Base-to-Emitter
Saturation
Voltage,
V
BE
(sat)
–
V
Collector Current, IC –A
Base-to-Emitter
Saturation
Voltage,
V
BE
(sat)
–
V
Collector
Current,
I C
–A
Collector-to-Emitter Voltage, VCE –V
Collector
Dissipation,
P
C
–m
W
Ambient Temperature, Ta – C
Mounted
on
a
glass-epoxy
board
(20
×
30×
1.6mm)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1977-A | 功能描述:TRANS RF PNP 12V 0.05A SOT-23 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:8.5GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 1GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:- 标准包装:1 |
| 2SA1977-L-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:GP BJT |
| 2SA1977-T1B-A | 功能描述:RF TRANSISTOR PNP SOT-23 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:8.5GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 1GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:3,000 |
| 2SA1977-T1B-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1978-A | 功能描述:RF TRANSISTOR PNP SOT-23 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:5.5GHz 噪声系数（dB，不同 f 时的典型值）:2dB @ 1GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 15mA，10V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:- 标准包装:1 |
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