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参数资料
| 型号： | 2SB1067 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-8H1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 214K |
| 代理商： | 2SB1067 |
2SB1067
2004-07-26
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1067
Micro-Moter Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 1 A, IB = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
8
V
Collector current
IC
2
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Equivalent Circuit
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
BASE
EMITTER
≈ 4 k
≈ 800
COLLECTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1067(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington PNP 80V 2A 3-Pin(3+Tab) PW-Mold |
| 2SB1067_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (Darlington Power Transistor) |
| 2SB1067_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
| 2SB1068 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SB1068K | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92 |
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