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参数资料
| 型号： | 2SB1067 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-8H1A, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 214K |
| 代理商： | 2SB1067 |
2SB1067
2004-07-26
4
Collector-emitter voltage VCE (V)
Safe Operating Area
Coll
ect
or
cur
re
nt
I C
(A
)
3
10
30
100
0.02
1
5
0.05
0.1
0.3
0.5
1
3
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
100 s*
DC operation
Tc = 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1067(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington PNP 80V 2A 3-Pin(3+Tab) PW-Mold |
| 2SB1067_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (Darlington Power Transistor) |
| 2SB1067_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
| 2SB1068 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SB1068K | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92 |
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