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参数资料
| 型号： | 2SB1067 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-8H1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 214K |
| 代理商： | 2SB1067 |
2SB1067
2004-07-26
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
―
10
A
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
―
4
mA
Collector-emitte breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
80
―
V
DC current gain
hFE
VCE = 2 V, IC = 1 A
2000
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 1 mA
―
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 1 mA
―
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
50
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
30
―
pF
Turn-on time
ton
―
0.4
―
Storage time
tstg
―
2.0
―
Switching time
Fall time
tf
IB1 = IB2 = 1 mA, duty cycle ≤ 1%
―
0.4
―
s
Marking
I B1
20 s
Input
I B2
VCC = 30 V
IB2
IB1
Output
30
B1067
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1067(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington PNP 80V 2A 3-Pin(3+Tab) PW-Mold |
| 2SB1067_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (Darlington Power Transistor) |
| 2SB1067_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
| 2SB1068 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SB1068K | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92 |
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