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参数资料
| 型号： | 2SB1260G-R-TN3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封装： | HALOGEN FREE PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 230K |
| 代理商： | 2SB1260G-R-TN3-R |
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R208-017,E
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-80
V
Collector -Emitter Voltage
VCEO
-80
V
Emitter -Base Voltage
VEBO
-5
V
Peak Collector Current (single pulse, Pw=100ms)
ICM
-2
A
DC Collector Current
IC
-1
A
SOT-89
0.5
W
Power Dissipation
TO-252
PD
1.9
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm
2 or larger.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Base Breakdown Voltage
BVCBO
IC= -50μA
-80
V
Collector Emitter Breakdown Voltage
BVCEO
IC= -1mA
-80
V
Emitter Base Breakdown Voltage
BVEBO
IE= -50μA
-5
V
Collector Cut-Off Current
ICBO
VCB=-60V
-1
μA
Emitter Cut-Off Current
IEBO
VEB=-4V
-1
μA
DC Current Gain(Note 1)
hFE
VCE=-3V, IOUT=-0.1A
82
390
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-500mA, IB=-50mA
-0.4
V
Transition Frequency
fT
VCE= -5V, IE=50mA, f=30MHz
100
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
25
pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82 ~ 180
120 ~ 270
180 ~ 390
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| 2SB1260T100Q | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
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| 2SB1260T100 | 制造商:Rohm 功能描述:PNP Cut Tape |
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| 2SB1260T100Q | 功能描述:两极晶体管 - BJT PNP 80V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1260T100R | 功能描述:两极晶体管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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