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参数资料
| 型号： | 2SC4957 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-4 |
| 文件页数： | 3/9页 |
| 文件大小： | 182K |
| 代理商： | 2SC4957 |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC4957
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN MINIMOLD
The mark
shows major revised points.
Document No. PU10520EJ01V0DS (1st edition)
(Previous No. P10379EJ2V0DS00)
Date Published September 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 1993, 2004
FEATURES
Low Noise, High Gain
Low Voltage Operation
Low Reverse Transfer Capacitance
Cre = 0.3 pF TYP.
4-pin minimold Package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4957
50 pcs (Non reel)
2SC4957-T1
3 kpcs/reel
8 mm wide embossed taping
Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
Ptot
Note
180
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4957-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.03A 4-Pin Mini-Mold |
| 2SC4957-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4957-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:6V 频率 - 跃迁:12GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 2GHz 增益:11dB 功率 - 最大值:180mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:75 @ 10mA，3V 电流 - 集电极（Ic）（最大值）:30mA 安装类型:表面贴装 封装/外壳:TO-253-4，TO-253AA 供应商器件封装:SOT-143 标准包装:3,000 |
| 2SC4959-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4960 | 功能描述:TRANS NPN 800VCEO 1A TOP-3F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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