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参数资料
| 型号： | 2SC5198 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-16C1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 122K |
| 代理商： | 2SC5198 |
2SC5198
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SA1941
Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
10
A
Base current
IB
1
A
Collector power dissipation
(Tc = 25°C)
PC
100
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5198_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications |
| 2SC5198O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 10A I(C) | TO-247VAR |
| 2SC5198-O(Q) | 功能描述:两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5198-O(Q,T) | 功能描述:两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5198-O(S1,X,S) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR |
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