参数资料
型号: 2SC5198
元件分类: 功率晶体管
英文描述: 10 A, 140 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-16C1A, 3 PIN
文件页数: 3/4页
文件大小: 122K
代理商: 2SC5198
2SC5198
2006-11-10
3
Collector current IC (A)
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
VCE (sat) – IC
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
IC – VBE
Collector current IC (A)
hFE – IC
DC
curre
nt
gain
h
FE
Base-emitter voltage VBE (V)
Colle
ct
or
curr
ent
I C
(A
)
Collector-emitter voltage VCE (V)
Colle
ct
or
curr
ent
I C
(A
)
Safe Operating Area
10
6
4
2
0
Common emitter
VCE = 5 V
8
0.8
1.2
1.6
0.4
0
2.0
Tc = 100°C
25°C
100
10
0.1
1
Common emitter
VCE = 5 V
0.01
1000
10
Tc = 100°C
Tc = 25°C
200
10
6
4
2
0
IB = 10 mA
20
Common emitter
Tc = 25°C
8
4
6
8
2
0
10
30
40
50
100
150
250
10
1
0.1
0.01
0.1
1
10
Common emitter
IC/IB = 10
100
Tc = 100°C
Tc = 25°C
0.05
2
30
1
10
30
100
300
0.5
3
5
10
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
0.3
0.1
3
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相关代理商/技术参数
参数描述
2SC5198_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications
2SC5198O 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 10A I(C) | TO-247VAR
2SC5198-O(Q) 功能描述:两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5198-O(Q,T) 功能描述:两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC5198-O(S1,X,S) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR