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参数资料
| 型号： | 2SC5663T2L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | VMT3, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 68K |
| 代理商： | 2SC5663T2L |
2SC5585 / 2SC5663
Transistors
Rev.B
1/2
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
Applications
For switching
For muting
Features
1) High current.
2) Low VCE(sat).
VCE(sat)
≤ 250mV at IC = 200mA / IB = 10mA
External dimensions (Unit : mm)
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5585
Abbreviated symbol : BX
ROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
Absolute maximum ratings (Ta=25
°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PC
Tj
Tstg
15
V
mA
mW
°C
12
Emitter-base voltage
VEBO
V
6
500
ICP
A
1
150
55 to +150
Symbol
Limits
Unit
Single pulse Pw = 1ms
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Cob
Min.
15
12
6
270
90
7.5
100
680
250
VIC = 10
A
IC = 1mA
IE = 10
A
VCB = 15V
VCE = 2V, IC = 10mA
IC = 200mA, IB = 10mA
VCB = 10V, IE = 0A, f = 1MHz
V
nA
Emitter cutoff current
IEBO
100
VCB = 6V
nA
mV
fT
320
VCE = 2V, IE =
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
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