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参数资料
| 型号： | 2SC5663T2L |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | VMT3, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 68K |
| 代理商： | 2SC5663T2L |
2SC5585 / 2SC5663
Transistors
Rev.B
2/2
Packaging specifications
Package
Code
Taping
Basic ordering
unit (pieces)
hFE
2SC5663
2SC5585
T2L
8000
TL
3000
Type
Electrical characteristic curves
0
1
10
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
100
0.5
1.0
1.5
VCE = 2V
1000
Ta
=
1
25
°C
25
°C
-40
°C
2
5
20
50
200
500
1
2
5
10
20
50
100 200
500
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
10
DC
CURRENT
GAIN
:
h
FE
1000
20
50
100
200
500
1000
Ta = 125
°C
5
2
1
VCE = 2V
25
°C
-40
°C
1
2
5
10
20
50
100
200
IC/IB = 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current (
Ι )
Ta = 125
°C
500
1000
25
°C
-40
°C
1
2
5
10
20
50
100
200
Ta = 25
°C
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
ΙΙ )
IC/IB = 50
500
1000
20
10
20
50
100
200
500
1000
2000
IC/IB = 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR
SATURATION
VOLTAGE
:
V
BE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Ta = -40
°C
5000
10000
25
°C
125
°C
2
1
5
10
20
50 100 200
500 1000
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°C
VCE
= 2V
fT
(MH
Z
)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6
Collector output capacitance
Emitter input capacitance
vs. base voltage
Pulsed
0.2
0.1
0.5
1
2
5
10
20
50
100
1
2
5
10
20
50
100
200
500
1000
Ta = 25
°C
IE = 0A
f
= 1MHz
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Cib
Cob
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