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参数资料
| 型号： | 2SC5676-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | THIN, ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 1/24页 |
| 文件大小： | 97K |
| 代理商： | 2SC5676-T1FB-A |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15286EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TRANSISTOR
2SC5676
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
Low voltage operation, low phase distortion
Ideal for OSC applications
Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5676
50 pcs (Non reel)
8 mm wide embossed taping
2SC5676-T1
3 kpcs/reel
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
5.5
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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