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参数资料
| 型号： | 2SC5676-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | THIN, ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 18/24页 |
| 文件大小： | 97K |
| 代理商： | 2SC5676-T1FB-A |
Data Sheet P15286EJ1V0DS
3
2SC5676
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
300
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.2
1.0
0.8
0.6
0.4
0.2
02
4
6
8
10
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
80
40
20
60
0
0.4
0.2
0.6
0.8
1.0
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
80
40
20
60
0
0.4
0.2
0.6
0.8
1.0
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35
30
20
25
15
5
10
01
2
3
46
5
7
100 A
120 A
40 A
60 A
80 A
140 A
160 A
180 A
200 A
IB = 20 A
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