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参数资料
| 型号： | 2SC5676-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | THIN, ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 12/24页 |
| 文件大小： | 97K |
| 代理商： | 2SC5676-T1FB-A |
Data Sheet P15286EJ1V0DS
2
2SC5676
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
200
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
–
200
nA
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 10 mA
100
–
160
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
4.0
5.5
–
GHz
Insertion Power Gain
S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz
2.5
4.0
–
dB
Noise Figure
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
–1.8
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
–
0.9
1.2
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
hFE CLASSIFICATION
Rank
FB
Marking
UC
hFE Value
100 to 160
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