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参数资料
| 型号： | 2SC5703 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-3S1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 129K |
| 代理商： | 2SC5703 |
2SC5703
2004-07-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5703
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
High-speed switching: tf = 55 ns (typ.)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEX
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
4
Collector current
Pulse
ICP
7
A
Base current
IB
400
mA
DC
800
Collector power
dissipation
t
= 10 s
PC
(Note)
1250
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2)
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 2 V, IC = 0.5 A
400
1000
DC current gain
hFE (2)
VCE = 2 V, IC = 1.6 A
200
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 32 mA
0.12
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 32 mA
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
26
pF
Rise time
tr
45
Storage time
tstg
700
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC 30 V, RL = 19
IB1 = IB2 = 53.3 mA
55
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5703(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5706-E | 功能描述:两极晶体管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5706-H | 功能描述:两极晶体管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5706-P-E | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5706-P-TL-E | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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