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参数资料
| 型号： | 2SD1480Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 166K |
| 代理商： | 2SD1480Q |
1
Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1052
s Features
q
High forward current transfer ratio hFE which has satisfactory
linearity
q
Low collector to emitter saturation voltage VCE(sat)
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
6
4
2
25
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICES
ICEO
IEBO
VCEO
hFE1
hFE2
*
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = 60V, VBE = 0
VCE = 30V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 0.1A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
min
60
35
70
typ
20
0.2
3.5
0.7
max
200
300
1
250
1.2
2
Unit
A
mA
V
MHz
s
*h
FE2 Rank classification
Rank
Q
P
hFE2
70 to 150
120 to 250
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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|---|---|
| 2SD1483 | 制造商:Panasonic Industrial Company 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 |
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| 2SD1484KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1484KT146Q | 功能描述:两极晶体管 - BJT NPN 50V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1484KT146R | 功能描述:两极晶体管 - BJT NPN 50V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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