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参数资料
| 型号： | 2SD1480Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 166K |
| 代理商： | 2SD1480Q |
2
Power Transistors
2SD1480
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Area of safe operation (ASO)
Rth(t) —t
0
150
125
100
25
75
50
0
40
30
10
25
35
20
5
15
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2.0W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
5
4
3
2
1
T
C=25C
I
B=100mA
80mA
50mA
40mA
30mA
20mA
10mA
5mA
1mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
03.0
2.5
2.0
0.5
1.5
1.0
0
6
5
4
3
2
1
V
CE=4V
T
C=100C
25C
–25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=4V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=10V
f=1MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
I
CP
I
C
t=10ms
1ms
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
10–4
10
10–3
10–1
10–2
1103
102
104
10–2
10–1
1
10
102
(1) Without heat sink
(2) With a 100
× 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1483 | 制造商:Panasonic Industrial Company 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 |
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| 2SD1484KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1484KT146Q | 功能描述:两极晶体管 - BJT NPN 50V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD1484KT146R | 功能描述:两极晶体管 - BJT NPN 50V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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