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参数资料
| 型号： | 2SD1658 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 156K |
| 代理商： | 2SD1658 |
2SD1658
2009-12-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD1658
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60 ± 10
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO
8
V
Collector current
IC
2
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
BASE
EMITTER
≈ 4 kΩ
≈ 800 Ω
COLLECTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1658(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SD1662(F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SD1662-1(F) | 制造商:Toshiba 功能描述:NPN 100V 15A 1000 TO3P Bulk 制造商:Toshiba 功能描述:0 |
| 2SD1664 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1664FT100Q | 功能描述:两极晶体管 - BJT NPN DRIVER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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