- 您现在的位置：买卖IC网 > PDF目录55792 > 2SD1658 2 A, 70 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD1658 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 156K |
| 代理商： | 2SD1658 |
2SD1658
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0
―
10
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
―
4
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
60
70
V
DC current gain
hFE
VCE = 2 V, IC = 1 A
2000
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 1 mA
―
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 1 mA
―
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
100
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
20
―
pF
Turn-on time
ton
―
0.4
―
Storage time
tstg
―
4.0
―
Switching time
Fall time
tf
IB1 = 1 mA,IB2 = 1 mA,
duty cycle ≤ 1%
―
0.6
―
μs
Marking
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
I B1
20 μs
I B2
VCC = 30 V
Output
30
Ω
IB2
IB1
Input
D1658
Part No. (or abbreviation code)
Lot No.
Note2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1685E | 5 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 2SD1710C | 7 A, 500 V, NPN, Si, POWER TRANSISTOR |
| 2SD1788 | 4 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SD1853 | 1500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD1857ATV2N | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD1658(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SD1662(F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SD1662-1(F) | 制造商:Toshiba 功能描述:NPN 100V 15A 1000 TO3P Bulk 制造商:Toshiba 功能描述:0 |
| 2SD1664 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1664FT100Q | 功能描述:两极晶体管 - BJT NPN DRIVER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。