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参数资料
| 型号： | 2SD2414(SM) |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | 2-10S2, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 141K |
| 代理商： | 2SD2414(SM) |
2SK2730
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
25
A
Drain peak current
ID(pulse)*
1
100
A
Body to drain diode reverse drain current
IDR
25
A
Avalanche current
IAP*
3
25
A
Avalanche energy
EAR*
3
35
mJ
Channel dissipation
Pch*
2
175
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.5
—
3.5
V
ID = 1 mA, VDS = 10 V*
4
Static drain to source on state
resistance
RDS(on)
—
0.2
0.24
ID = 15 A, VGS = 10 V*
4
Forward transfer admittance
|yfs|
12
20
—
S
ID = 15 A, VDS = 10 V*
4
Input capacitance
Ciss
—
3500
—
pF
Output capacitance
Coss
—
1000
—
pF
Reverse transfer capacitance
Crss
—
150
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge
Qg
—
65
—
nc
Gate to source charge
Qgs
—
16
—
nc
Gate to drain charge
Qgd
—
24
—
nc
VDD = 400 V, VGS = 10 V,
ID = 25 A
Turn-on delay time
td(on)
—
50
—
ns
Rise time
tr
—
140
—
ns
Turn-off delay time
td(off)
—
200
—
ns
Fall time
tf
—
110
—
ns
VGS = 10 V, ID = 15 A,
RL = 2
Body to drain diode forward voltage
VDF
—
1.1
—
V
ID = 25 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
450
—
ns
IF = 25 A, VGS = 0
diF/ dt = 100A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2414-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2420AP | 功能描述:TRANS NPN 80VCEO 4A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2425-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,5.0A,MP-2 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) MP-2 T/R |
| 2SD2425-T1-AZ-AB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2436 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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