参数资料
型号: 2SJ161-E
元件分类: JFETs
英文描述: 7 A, P-CHANNEL, Si, POWER, MOSFET
封装: SC-65, TO-3P, 3 PIN
文件页数: 1/8页
文件大小: 83K
代理商: 2SJ161-E
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
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相关PDF资料
PDF描述
2SJ165-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ191 2 A, 60 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ192TP 4 A, 60 V, 0.27 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ200-O 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
2SJ204 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2SJ162 功能描述:MOSFET P-CH 160V 7A TO-3P RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SJ162-E 功能描述:MOSFET P-CH 160V 7A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SJ163 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For General Switching
2SJ164 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Switching
2SJ165 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR