参数资料
型号: 2SJ161-E
元件分类: JFETs
英文描述: 7 A, P-CHANNEL, Si, POWER, MOSFET
封装: SC-65, TO-3P, 3 PIN
文件页数: 4/8页
文件大小: 83K
代理商: 2SJ161-E
2SJ160, 2SJ161, 2SJ162
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
2SJ160
–120
2SJ161
–140
Drain to source voltage
2SJ162
VDSX
–160
V
Gate to source voltage
VGSS
±15
V
Drain current
ID
–7
A
Body to drain diode reverse drain current
IDR
–7
A
Channel dissipation
Pch
Note 1
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
2SJ160
–120
V
2SJ161
–140
V
Drain to source breakdown
voltage
2SJ162
V (BR) DSX
–160
V
ID = –10 mA, VGS = 10 V
Gate to source breakdown voltage
V (BR) GSS
±15
V
IG =
±100 A, VDS = 0
Gate to source cutoff voltage
VGS (off)
–0.15
–1.45
V
ID = –100 mA, VDS = –10 V
Drain to source saturation voltage
VDS (sat)
–12
V
ID = –7 A, VGS = 0
Note 2
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = –3 A, VDS = –10 V
Note 2
Input capacitance
Ciss
900
pF
Output capacitance
Coss
400
pF
Reverse transfer capacitance
Crss
40
pF
VGS = 5 V, VDS = –10 V,
f = 1 MHz
Turn-on time
ton
230
ns
Turn-off time
toff
110
ns
VDD = –20 V ID = –4 A
Note:
2. Pulse test
相关PDF资料
PDF描述
2SJ165-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ191 2 A, 60 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ192TP 4 A, 60 V, 0.27 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ200-O 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
2SJ204 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2SJ162 功能描述:MOSFET P-CH 160V 7A TO-3P RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SJ162-E 功能描述:MOSFET P-CH 160V 7A TO-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
2SJ163 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For General Switching
2SJ164 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Switching
2SJ165 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR