- 您现在的位置：买卖IC网 > PDF目录49986 > 2SJ184-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ184-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 431K |
| 代理商： | 2SJ184-A |
Data Sheet D13095EJ2V0DS
3
2SK3056
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100 120 140 160
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
VDS - Drain to Source Voltage - V
1
10
100
0.1
1
10
TC = 25C
Single Pulse
0.1
100
Power
Dissipation
Limited
RDS(on)
Limited
ID(pulse)
PW
=
10
s
1 ms
10
ms
DC
1000
100
s
100
ms
ID(DC)
5
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
Single Pulse
Rth(ch-A) = 83.3 C/W
TC = 25C
10
100
Rth(ch-C) = 3.68 C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ186CYEL-E | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ190 | 1 A, 60 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ193 | 1 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ197-AZ | 1.5 A, 60 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ197-T1 | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ185 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ185-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ185-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 50V 0.1A 3-Pin SC-59 T/R 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ186 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。