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参数资料
| 型号： | 2SJ184-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 4/7页 |
| 文件大小： | 431K |
| 代理商： | 2SJ184-A |
Data Sheet D13095EJ2V0DS
4
2SK3056
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
Pulsed
2
04
6
8
VDS = 10 V
TA = -25C
25C
75C
125C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
12
3
40
80
60
Pulsed
VGS =10 V
20
VGS = 4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
VDS =10 V
Pulsed
0.1
1
10
100
10
100
0.1
1.0
TA = 125C
75C
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
10
25
75
20
Pulsed
50
ID = 16 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
25
0.1
10
50
75
100
1000
Pulsed
0
VGS = 10 V
VGS = 4.0 V
1
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
0.5
VDS = 10 V
ID = 1 mA
1.0
1.5
2.0
50
0
50
100
150
0
Tch - Channel Temperature - C
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相关代理商/技术参数 |
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| 2SJ185 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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| 2SJ186 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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