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参数资料
| 型号： | 2SJ184-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 6/7页 |
| 文件大小： | 431K |
| 代理商： | 2SJ184-A |
Data Sheet D13095EJ2V0DS
6
2SK3056
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
|
I
AS
|
-
Single
Avalanche
Current
-
A
VDD = 30 V
RG = 25
10
100
10
100
1 m
10 m
0.1
1
IAS = 16 A
EAS
= 25.6
mJ
VGS = 20
→ 0 V
Starting Tch = 25C
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C
Energy
Derating
Factor
-
%
25
50
75
100
60
40
20
0
160
140
125
150
120
100
80
VDD = 30 V
RG = 25
VGS = 20
→ 0 V
IAS
≤ 16A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ185 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 2SJ185-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ185-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 50V 0.1A 3-Pin SC-59 T/R 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ186 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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