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参数资料
| 型号： | 2SJ184-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 7/7页 |
| 文件大小： | 431K |
| 代理商： | 2SJ184-A |
Data Sheet D13095EJ2V0DS
7
2SK3056
PACKAGE DRAWINGS (Unit: mm)
1)
TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
3)
TO-263 (MP-25ZJ)
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
4) TO-220SMD(MP-25Z)
Note
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.0±0.3
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
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相关代理商/技术参数 |
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| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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