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参数资料
| 型号： | 2SJ278MYTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-62, UPAK -3 |
| 文件页数： | 4/9页 |
| 文件大小： | 91K |
| 代理商： | 2SJ278MYTL-E |
2SJ278
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–1
A
Drain peak current
ID (pulse)
Note 1
–4
A
Body to drain diode reverse drain current
IDR
–1
A
Channel dissipation
Pch
Note 2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±5
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–10
A
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.25
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.7
0.83
ID = –0.5 A, VGS = –10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
0.9
1.2
ID = –0.5 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
0.6
1.0
—
S
ID = –0.5 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
160
—
pF
Output capacitance
Coss
—
80
—
pF
Reverse transfer capacitance
Crss
—
28
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
7
—
ns
Rise time
tr
—
8
—
ns
Turn-off delay time
td (off)
—
30
—
ns
Fall time
tf
—
25
—
ns
ID = –0.5 A
VGS = –10 V
RL = 60
Body to drain diode forward voltage
VDF
—
–1.1
—
V
IF = –1 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
90
—
ns
IF = –1 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ278MYTR-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1A,0.7ohm,UPAK 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) UPAK T/R |
| 2SJ279 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ279(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA |
| 2SJ279(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SJ280 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
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