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参数资料
| 型号： | 2SJ278MYTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-62, UPAK -3 |
| 文件页数： | 5/9页 |
| 文件大小： | 91K |
| 代理商： | 2SJ278MYTL-E |
2SJ278
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
(on
the
alumina
ceramic
board)
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–2.0
0
–0.4
–0.8
–1.2
–1.6
0–2
–4
–6
–8
–10
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–1–2–3–4–5
Tc = 75°C
–25°C
2.0
0
0.5
1.0
1.5
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–3 V
–6 V
–4 V
–2.5 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–3
–1
–0.3
–0.1
–0.005
–0.01
–0.03
–0.1
–0.3
–1
–3
–10
–30
–100
–5
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–2
–4
–6
–8
–10
Pulse Test
ID = –1 A
–0.2 A
–0.5 A
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.1
0.2
0.05
–0.1
–0.5
–1
–0.05
–0.2
–2
–5
5
2
VGS = –4 V
–10 V
Pulse Test
25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ278MYTR-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,1A,0.7ohm,UPAK 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) UPAK T/R |
| 2SJ279 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ279(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA |
| 2SJ279(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SJ280 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
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