参数资料
型号: 2SJ278MYTL-E
元件分类: 小信号晶体管
英文描述: 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SC-62, UPAK -3
文件页数: 6/9页
文件大小: 91K
代理商: 2SJ278MYTL-E
2SJ278
Rev.2.00 Sep 07, 2005 page 4 of 6
2.0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.4
0.8
1.2
1.6
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–10 V
VGS = –4 V
ID = –1 A
–1 A
–0.5 A, –0.2 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
5
2
0.5
1
0.2
0.05
0.1
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.02
–0.05 –0.1 –0.2
–0.5
–1
–2
500
200
100
20
50
10
5
di / dt = 50 A /
s
VGS = 0, duty ≤ 1 %
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
300
100
30
10
3
1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
VDD = –10 V
–25 V
–40 V
ID = –1 A
500
200
100
20
50
10
5
–0.02
–0.05 –0.1 –0.2
–0.5
–1
–0.01
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
–0.5 A, –0.2 A
VDD = –10 V
–25 V
–40 V
VGS = –10 V, VDD = –30 V
PW = 2
s, duty ≤ 1 %
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