- 您现在的位置：买卖IC网 > PDF目录55794 > 2SJ317 SMALL SIGNAL, FET PDF资料下载
参数资料
| 型号： | 2SJ317 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | UPAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 36K |
| 代理商： | 2SJ317 |
2SJ317
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–12
V
Gate to source voltage
V
GSS
–7
V
Drain current
I
D
±2
A
Drain peak current
I
D(pulse)*
1
±4
A
Body to drain diode reverse drain current
I
DR
2A
Channel dissipation
Pch*
2
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 100 s, duty cycle 10%
2. Value on the alumina ceramic board (12.5
×20×0.7 mm).
3. Marking is “NY”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–12
—
V
I
D = –1 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±7
——V
I
G = ±10 A, VDS = 0
Gate to source cutoff current
I
GSS
——±5
A
V
GS = ±6.5 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–1AV
DS = –8 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–0.4
—
–1.4
V
I
D = –100 A, VDS = –5 V
Static drain to source on state
R
DS(on)1
—
0.4
0.7
I
D = –0.5 A*
1, V
GS = –2.2 V
resistance
R
DS(on)2
—
0.28
0.35
I
D = –1 A*
1, V
GS = –4 V
Forward transfer admittance
|y
fs|
1.0
2.3
—
S
I
D = –1 A*
1, V
DS = –5 V
Input capacitance
Ciss
—
63
—
pF
V
DS = –5 V, VGS = 0,
Output capacitance
Coss
—
180
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
23
—
pF
Turn-on time
t
on
—
500
—
ns
I
D = –0.2 A*
1, Vin = –4 V,
Turn-off time
t
off
—
2860
—
ns
R
L = 51
Note:
1. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ326 | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SJ352 | 8 A, 200 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ358 | 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ317NY(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ317NYTLE | 制造商:RENESAS 功能描述:RoHS COMPLIANT |
| 2SJ317NYTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ317NYTR-E | 制造商:Renesas Electronics Corporation 功能描述:DISCRETES>TRANSISTOR>POWER MOSFETS |
| 2SJ318(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-251AA |
发布紧急采购，3分钟左右您将得到回复。