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参数资料
| 型号： | 2SJ317 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | UPAK-3 |
| 文件页数： | 5/8页 |
| 文件大小： | 36K |
| 代理商： | 2SJ317 |
2SJ317
5
2000
1000
500
200
100
50
20
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
di/dt = 10 A/s
V
= 0
Reverse Recovery Time vs.
Reverse Drain Current
GS
2000
1000
500
200
100
50
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
Drain Current
I
(A)
D
Switching
Time
t
(ns)
td(on)
td(off)
tr
tf
Switching Time vs. Drain Current
V
= –4 V
V
= –10 V
PW = 5 s
Duty cycle 1 %
.
<
=
GS
DD
–25
–20
–15
–10
–5
24
6
8
10
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
VDS
V
= –10 V
I
= –2 A
Pulse test
0
VGS
DD
D
–10
–8
–6
–4
–2
0
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
1000
500
200
100
50
20
10
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Drain to Source Voltage
V
(V)
DS
Typical
Capacitance
C
(pF)
V
= 0
f = 1 MHz
Coss
Ciss
GS
Crss
Typical Capacitance vs.
Drain to Source Voltage
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ326 | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SJ352 | 8 A, 200 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ358 | 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ317NY(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ317NYTLE | 制造商:RENESAS 功能描述:RoHS COMPLIANT |
| 2SJ317NYTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ317NYTR-E | 制造商:Renesas Electronics Corporation 功能描述:DISCRETES>TRANSISTOR>POWER MOSFETS |
| 2SJ318(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-251AA |
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