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参数资料
| 型号： | 2SJ317 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | UPAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 36K |
| 代理商： | 2SJ317 |
2SJ317
3
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature
Ta (°C)
Channel
Power
Dissipation
Pch
(W)
(on
the
aluminam
ceramic
board)
Maximun Power Dissipation Curve
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
–1.0
–3
–10
–30
–100
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Operation in this Area
is limited by RDS(on)
DC
Operation
(Tc=25°C)
PW = 1 ms
1 shot
Ta = 25°C
Maximun Safe Operation Area
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
V
= –1 V
–2.5
–2
–1.5
GS
Pulse test
–3
–4
–5
Typical Output Characteristics
–5
–4
–3
–2
–1
0–1
–2
–3
–4
–5
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
V
= –5 V
Pulse test
DS
Ta = –25°C
25°C
75°C
Typical Forward Transfer Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ326 | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SJ352 | 8 A, 200 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ358 | 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ317NY(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ317NYTLE | 制造商:RENESAS 功能描述:RoHS COMPLIANT |
| 2SJ317NYTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ317NYTR-E | 制造商:Renesas Electronics Corporation 功能描述:DISCRETES>TRANSISTOR>POWER MOSFETS |
| 2SJ318(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-251AA |
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