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参数资料
| 型号： | 2SJ319L-E |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 103K |
| 代理商： | 2SJ319L-E |
R07DS0396EJ0300 Rev.3.00
Page 1 of 6
May 16, 2011
Preliminary Datasheet
2SJ319(L), 2SJ319(S)
Silicon P Channel MOS FET
Description
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK (L)-(1) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
1
2
3
4
1
2
3
4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–3
A
Drain peak current
ID (pulse)
Note 1
–12
A
Body to drain diode reverse drain current
IDR
–3
A
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
R07DS0396EJ0300
(Previous: REJ03G0858-0200)
Rev.3.00
May 16, 2011
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| 2SJ327-Z-AZ | 4000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ327-AZ | 4000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ320 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ321 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
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